Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
Belkin is introducing several new power products at this year’s CES, including a charging case for the Nintendo Switch 2 that can come with a built-in power bank. CES is always a hotbed for new and ...
The IRU3038 synchronous pulse-width modulation (PWM) controller IC handles the termination-voltage requirements of double-data-rate (DDR) memory arrays. By ...
Electronics obtained through the bottom-up approach of molecular-level control of material composition and structure may lead to devices and fabrication strategies not possible with top-down methods.
Abstract: The computing revolution and the rise of modern artificial intelligence are rooted in the physics of semiconductor devices, where the field effect transistor (FET) emerged as the archetypal ...
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Abstract: Thermomechanical stress induced by through-silicon vias (TSVs) plays an important role in the performance and reliability analysis of 2.5D/3D ICs. While the finite element method (FEM) ...
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