DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...

An ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F 2 cell can be achieved. “This paper proposes an ultra-scaled ...

Gate-All-Around Transistors: In a new design, the transistor channel is made up of an array of vertical nanowires. The gate surrounds all the nanowires, which improves its ability to control the flow ...

Researchers in Japan have made an important advance in developing a new type of silicon-based transistor by successfully creating vertical transistors from semiconducting nanowires on a silicon ...

Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...

SINGAPORE — The Institute of Microelectronics (IME) and Japanese R&D company Unisantis Electronics will co-develop the world's first three-dimensional transistor. The device, known as the Surrounding ...

At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company’s upcoming 22nm processors will feature a fundamental change to ...

Transistors are tiny electronic components that act as switches and amplifiers, and they dwell at the heart of modern technology. In simple terms, a transistor can turn a flow of electricity on or off ...

SINGAPORE--A collaboration between Unisantis Japan and Singapore's Institute of Microelectronics (IME) will see the development of a transistor promising a "breakthrough" in computing power. The ...

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...