Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density ...

LONDON – Tower Semiconductor Ltd., a foundry which trades as TowerJazz, has announced that it has integrated a thermally assisted switching (TAS) magnetic random access memory (MRAM) into its 130-nm ...

SAN FRANCISCO — Intel gave further details on its technique for embedding spin-transfer torque (STT)-MRAM into devices using its 22-nm FinFET process, pronouncing the technology ready for high-volume ...

NXP and TSMC jointly develop embedded MRAM IP in TSMC 16 nm FinFET technology With MRAM, carmakers can more efficiently roll out new features, accelerate over-the-air (OTA) updates and remove ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

Taiwan-based semiconductor foundry house United Microelectronics Corporation (UMC) and Avalanche Technology, a developer of the next generation STT-MRAM (spin transfer torque magnetic RAM), have ...

Advanced non-volatile memory technologies form one of those topics like religion, politics, and child-raising: best not discussed at family get-togethers. Each of the various technologies—phase-change ...

A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...

Memory plays a key role in both training and implementation of artificial intelligence solutions, such as machine learning. It is also a requirement for the creation of advanced network technologies, ...

This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...