For many recent generation power semiconductors, package innovation makes a significant contribution to key performance parameters. In the case of HV MOSFETs, high-speed hard-switching transitions are ...
For example, if a MOSFET in an SO8 package (θ JD = 15°C/W) dissipates a P j of 1 W and must maintain a junction temperature below 125°C, then the measured drain temperature must not exceed 110°C ...
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