A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...

Toshiba explained that by applying this technique, gate density for 45-nm CMOS technology is boosted to 2.6 times higher than that of 65-nm CMOS technology, and surpasses the typical gain of 2 times ...

Using CMOS Gates to create crystal oscillators is cost-effective and gives the designer more control over the parameters. To view the application note, click on the URL below. Circuit selected for www ...

The IXRFD630 is a CMOS high speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall ...

Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...

Any typical digital design style with CMOS uses complementary pairs of p-type and n-type MOSFETs for logic functions implementation. Naturally, CMOS always ought to provide INVERTED outputs like ...